Staff profiles

Vivian FangScientist: Nanoelectronics Research

Fang Vivian 2272

Department

Materials

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Qualifications

  • Master of Science, Physics
  • PhD, Electronics and mechanical engineering
  • BSc, Physics

Areas of expertise

  • Nuclear Physics: New materials development
  • Nuclear Physics: Ion implantation
  • Nuclear Physics: Nanotechnology
  • Nuclear Physics: Nanostructures
  • Nuclear Physics: Advanced materials
  • Nuclear Physics: Material science
  • Nuclear Physics: Semiconductor physics
  • Nanotechnology: Metal oxide
  • Nanotechnology: nanoclusters
  • Nanotechnology: nano sensors
  • Nanotechnology: Carbon nanotubes
  • Nanotechnology: MEMS
  • Nuclear Physics: surface coatings
  • Nanotechnology: surface coatings

Major Publications

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  • Fang, F.; Kennedy, J.V.; Carder, D.; Futter, R.J.; Rubanov, S. 2014. Investigations of near infrared reflective behaviour of TiO2 nanopowders synthesised by arc discharge, Optical Materials 36(7): p. 1260-1265. DOI: 10.1016/j.optmat.2014.03.010. p. 1260-1265
  • Chan, T.K.; Fang, F.; Markwitz, A.; Osipowicz, T. 2012. Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry, Applied Physics Letters 101(8): 081602. DOI: 10.1063/1.4747487. 081602
  • Fang, F.; Kennedy, J.V.; Futter, R.J.; Hopf, T.; Markwitz, A.; Manikandan, E.; Henshaw, G. 2011. Size-controlled synthesis and gas sensing application of tungsten oxide nanostructures produced by arc discharge, Nanotechnology 22(33): DOI: 10.1088/0957-4484/22/33/335702.
  • Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009. UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method, Nanotechnology 20(24): Paper 245502. DOI: 10.1088/0957-4484/20/24/245502. Paper 245502
  • Fang, F.; Markwitz, A. 2009. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing, Journal of nanoscience and nanotechnology 9(5): p. 2950-2955. p. 2950-2955
  • Zhou, W.M.; Fang, F.; Hou, Z.Y.; Yan, L.J.; Zhang, Y.F. 2006. Field-effect transistor based on [Beta]-SiC nanowire, IEEE elctron device letters 27(6): p. 463-465. p. 463-465
  • Fang, F.; Deng, H.Q. 2003. Surface segregation of Al-Pb immiscible alloy system with Monte Carlo simulation, Materials Science & Engineering. B, Solid-state Materials for Advanced Technology 98(3): p. 265-268. p. 265-268

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